دیتاشیت SI9433BDY-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت | SI9433BDY-T1-GE3 |
|---|---|
| حجم فایل | 69.051 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت SI9433BDY-T1-GE3 |
SI9433BDY-T1-GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SI9433BDY-T1-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1.3W
- Total Gate Charge (Qg@Vgs): 14nC@4.5V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 4.5A
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@6.2A,4.5V
- Package: SOP-8
- Manufacturer: Vishay Intertech
